P-channel transistor NTD2955T4, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V

P-channel transistor NTD2955T4, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V

Quantity
Unit price
1-4
0.98$
5-49
0.81$
50-99
0.68$
100-199
0.60$
200+
0.53$
Quantity in stock: 192

P-channel transistor NTD2955T4, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 500pF. Channel type: P. Cost): 150pF. Drain-source protection: zener diode. Function: ID pulse 36A/10ms. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 36A. Marking on the case: NT2955. Number of terminals: 2. On-resistance Rds On: 0.155 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 55W. Quantity per case: 1. RoHS: yes. Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Trr Diode (Min.): 50us. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
NTD2955T4
29 parameters
ID (T=25°C)
12A
Idss (max)
100uA
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
500pF
Channel type
P
Cost)
150pF
Drain-source protection
zener diode
Function
ID pulse 36A/10ms
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
10uA
Id(imp)
36A
Marking on the case
NT2955
Number of terminals
2
On-resistance Rds On
0.155 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
55W
Quantity per case
1
RoHS
yes
Td(off)
26 ns
Td(on)
10 ns
Technology
Power MOSFET
Trr Diode (Min.)
50us
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
ON Semiconductor