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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 8A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V - RFD8P05SM

P-channel transistor, 8A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V - RFD8P05SM
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Quantity excl. VAT VAT incl.
1 - 4 2.25$ 2.25$
5 - 9 2.13$ 2.13$
10 - 24 2.07$ 2.07$
25 - 49 2.02$ 2.02$
50 - 99 1.98$ 1.98$
100 - 146 1.84$ 1.84$
Quantity U.P
1 - 4 2.25$ 2.25$
5 - 9 2.13$ 2.13$
10 - 24 2.07$ 2.07$
25 - 49 2.02$ 2.02$
50 - 99 1.98$ 1.98$
100 - 146 1.84$ 1.84$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 146
Set of 1

P-channel transistor, 8A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V - RFD8P05SM. P-channel transistor, 8A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V. ID (T=25°C): 8A. Idss (max): 25uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 50V. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 125us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 20A. ID (T=100°C): 6A. IDss (min): 1uA. Marking on the case: D8P05. Number of terminals: 2. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Spec info: ID pulse 20A. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 16 ns. Technology: Power MOSFET MegaFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Original product from manufacturer Harris. Quantity in stock updated on 04/06/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 92
SPD08P06P

SPD08P06P

P-channel transistor, 8.8A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (...
SPD08P06P
P-channel transistor, 8.8A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 8.8A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 60us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 6.2A. IDss (min): 0.1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Spec info: ID pulse 35.2A. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V
SPD08P06P
P-channel transistor, 8.8A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 8.8A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 60us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 6.2A. IDss (min): 0.1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Spec info: ID pulse 35.2A. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V
Set of 1
1.43$ VAT incl.
(1.43$ excl. VAT)
1.43$

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