P-channel transistor IRF9510PBF, TO-220, -100V, 4A, -100V, 4A, 500uA, TO-220AB, 100V. Housing: TO-220. Drain-source voltage (Vds): -100V. Max drain current: 4A. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: -100V. ID (T=25°C): 4A. Idss (max): 500uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 200pF. Channel type: P. Ciss Gate Capacitance [pF]: 200pF. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Cost): 94pF. Drain current Id (A) @ 25°C: -4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -2.4A. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs: 20V. ID (T=100°C): 2.8A. IDss (min): 100uA. Id(imp): 16A. Manufacturer's marking: IRF9510PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 43W. Number of terminals: 3. On-resistance Rds On: 1.2 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 43W. Power: 43W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 10 ns. Td(off): 15 ns. Td(on): 10 ns. Technology: V-MOS. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27