P-channel transistor IRF9520, 6.8A, 500uA, TO-220, TO-220AB, 100V

P-channel transistor IRF9520, 6.8A, 500uA, TO-220, TO-220AB, 100V

Quantity
Unit price
1-4
1.15$
5-24
0.95$
25-49
0.85$
50+
0.74$
Equivalence available
Quantity in stock: 7

P-channel transistor IRF9520, 6.8A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 390pF. Channel type: P. Cost): 170pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 4.8A. IDss (min): 100uA. Id(imp): 27A. Number of terminals: 3. On-resistance Rds On: 0.6 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 60W. Quantity per case: 1. RoHS: yes. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF9520
30 parameters
ID (T=25°C)
6.8A
Idss (max)
500uA
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
390pF
Channel type
P
Cost)
170pF
Drain-source protection
zener diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
4.8A
IDss (min)
100uA
Id(imp)
27A
Number of terminals
3
On-resistance Rds On
0.6 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
60W
Quantity per case
1
RoHS
yes
Td(off)
21 ns
Td(on)
9.6 ns
Technology
HEXFET Power-MOSFET
Trr Diode (Min.)
98 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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