P-channel transistor IRF9520N, 6.8A, 250uA, TO-220, TO-220AB, 100V

P-channel transistor IRF9520N, 6.8A, 250uA, TO-220, TO-220AB, 100V

Quantity
Unit price
1-4
1.18$
5-24
1.00$
25-49
0.87$
50-99
0.81$
100+
0.72$
Quantity in stock: 263

P-channel transistor IRF9520N, 6.8A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 350pF. Channel type: P. Cost): 110pF. Drain-source protection: yes. Function: P-channel MOSFET transistor. G-S Protection: no. ID (T=100°C): 4.1A. IDss (min): 25uA. Id(imp): 27A. On-resistance Rds On: 0.48 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 48W. Quantity per case: 1. RoHS: yes. Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF9520N
28 parameters
ID (T=25°C)
6.8A
Idss (max)
250uA
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
350pF
Channel type
P
Cost)
110pF
Drain-source protection
yes
Function
P-channel MOSFET transistor
G-S Protection
no
ID (T=100°C)
4.1A
IDss (min)
25uA
Id(imp)
27A
On-resistance Rds On
0.48 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
48W
Quantity per case
1
RoHS
yes
Td(off)
28 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
100 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier