Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.93$ | 0.93$ |
5 - 9 | 0.89$ | 0.89$ |
10 - 24 | 0.86$ | 0.86$ |
25 - 49 | 0.84$ | 0.84$ |
50 - 99 | 0.82$ | 0.82$ |
100 - 249 | 0.79$ | 0.79$ |
250+ | 0.77$ | 0.77$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.93$ | 0.93$ |
5 - 9 | 0.89$ | 0.89$ |
10 - 24 | 0.86$ | 0.86$ |
25 - 49 | 0.84$ | 0.84$ |
50 - 99 | 0.82$ | 0.82$ |
100 - 249 | 0.79$ | 0.79$ |
250+ | 0.77$ | 0.77$ |
STX112. Assembly/installation: PCB through-hole mounting. BE diode: NINCS. CE diode: NINCS. Collector current: 2A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Function: Linear and switching applications. Housing: TO-92. Housing (according to data sheet): TO-92. Ic(pulse): 4A. Max hFE gain: 1000. Minimum hFE gain: 500. Number of terminals: 3 pieces. Pd (Power Dissipation, Max): 1.2W. Process: Monolithic Darlington. ROHS: yes. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Temperature: +150°C. Type of transistor: NPN. Vcbo: 100V. Vebo: 5V. Quantity in stock updated on 17/06/2025, 20:25.
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