NPN transistor, 1.5A, SOT-23 ( TO-236 ), SOT-23, 25V - MMSS8050-H
| Quantity (Set of 10) | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 1.67$ | 1.67$ |
| 2 - 2 | 1.59$ | 1.59$ |
| 3 - 4 | 1.51$ | 1.51$ |
| 5 - 9 | 1.42$ | 1.42$ |
| 10 - 24 | 1.34$ | 1.34$ |
| 25 - 49 | 1.10$ | 1.10$ |
| 50 - 214 | 1.03$ | 1.03$ |
| Quantity (Set of 10) | U.P | |
|---|---|---|
| 1 - 1 | 1.67$ | 1.67$ |
| 2 - 2 | 1.59$ | 1.59$ |
| 3 - 4 | 1.51$ | 1.51$ |
| 5 - 9 | 1.42$ | 1.42$ |
| 10 - 24 | 1.34$ | 1.34$ |
| 25 - 49 | 1.10$ | 1.10$ |
| 50 - 214 | 1.03$ | 1.03$ |
NPN transistor, 1.5A, SOT-23 ( TO-236 ), SOT-23, 25V - MMSS8050-H. NPN transistor, 1.5A, SOT-23 ( TO-236 ), SOT-23, 25V. Collector current: 1.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 25V. Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 350. Minimum hFE gain: 200. Marking on the case: Y1. Pd (Power Dissipation, Max): 0.3W. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 19/04/2025, 03:25.
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