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| Quantity in stock: 74 |
NPN-Transistor MJE210G, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V
Quantity
Unit price
1-4
0.63$
5-24
0.55$
25-49
0.47$
50-99
0.40$
100+
0.30$
| Equivalence available | |
| Quantity in stock: 496 |
NPN-Transistor MJE210G, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 120pF. FT: 65MHz. Function: -. Maximum saturation voltage VCE(sat): 1.8V. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 15W. Quantity per case: 1. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE200. Type of transistor: PNP. Vcbo: 25V. Vebo: 8V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27
MJE210G
20 parameters
Collector current
5A
Housing
TO-126 (TO-225, SOT-32)
Housing (according to data sheet)
TO-225
Collector/emitter voltage Vceo
40V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
120pF
FT
65MHz
Maximum saturation voltage VCE(sat)
1.8V
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
15W
Quantity per case
1
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJE200
Type of transistor
PNP
Vcbo
25V
Vebo
8V
Original product from manufacturer
ON Semiconductor