NPN-Transistor MJE253G, -100V, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V

NPN-Transistor MJE253G, -100V, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V

Quantity
Unit price
1-4
0.72$
5-24
0.61$
25-49
0.53$
50-99
0.47$
100+
0.38$
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Quantity in stock: 74

NPN-Transistor MJE253G, -100V, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 200pF. FT: 40 MHz. Function: High speed switching. Audio. Ic(pulse): 8A. Max frequency: 40 MHz. Max hFE gain: 180. Minimum hFE gain: 40. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 15W. Polarity: PNP. Power: 15W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE243. Type of transistor: PNP. Vcbo: 100V. Vebo: 7V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
MJE253G
29 parameters
Collector-Emitter Voltage VCEO
-100V
Collector current
4A
Housing
TO-126 (TO-225, SOT-32)
Housing (according to data sheet)
TO-225
Collector/emitter voltage Vceo
100V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
200pF
FT
40 MHz
Function
High speed switching
Ic(pulse)
8A
Max frequency
40 MHz
Max hFE gain
180
Minimum hFE gain
40
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
15W
Polarity
PNP
Power
15W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJE243
Type of transistor
PNP
Vcbo
100V
Vebo
7V
Original product from manufacturer
ON Semiconductor