NPN transistor MJE15030G, 150V, 8A, TO-220, TO-220AB, 150V

NPN transistor MJE15030G, 150V, 8A, TO-220, TO-220AB, 150V

Quantity
Unit price
1-4
2.20$
5-24
1.94$
25-49
1.73$
50-99
1.55$
100+
1.31$
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Equivalence available
Quantity in stock: 99

NPN transistor MJE15030G, 150V, 8A, TO-220, TO-220AB, 150V. Collector-Emitter Voltage VCEO: 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 30 MHz. Function: for audio amplifier. Ic(pulse): 16A. Max frequency: 30MHz. Max hFE gain: 40. Minimum hFE gain: 20. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 50W. Polarity: NPN. Power: 50W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE15031G. Type of transistor: NPN. Vcbo: 150V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/08/2025, 21:30

Technical documentation (PDF)
MJE15030G
28 parameters
Collector-Emitter Voltage VCEO
150V
Collector current
8A
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Collector/emitter voltage Vceo
150V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
FT
30 MHz
Function
for audio amplifier
Ic(pulse)
16A
Max frequency
30MHz
Max hFE gain
40
Minimum hFE gain
20
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
50W
Polarity
NPN
Power
50W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.5V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJE15031G
Type of transistor
NPN
Vcbo
150V
Vebo
5V
Original product from manufacturer
ON Semiconductor

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