NPN transistor MJE15032G, 250V, TO-220, 8A, 8A, TO-220AB, 250V

NPN transistor MJE15032G, 250V, TO-220, 8A, 8A, TO-220AB, 250V

Quantity
Unit price
1-4
2.38$
5-24
2.09$
25-49
1.86$
50-99
1.67$
100+
1.41$
+542 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 34

NPN transistor MJE15032G, 250V, TO-220, 8A, 8A, TO-220AB, 250V. Collector-Emitter Voltage VCEO: 250V. Housing: TO-220. Collector current: 8A. Collector current Ic [A], max.: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 250V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 30MHz. CE diode: no. Collector-Base Voltage VCBO: 250V. Collector-emitter voltage Uceo [V]: 250V. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Cost): 4pF. Current Max 1: 8A. Cutoff frequency ft [MHz]: 30 MHz. DC Collector/Base Gain hFE min.: 10. FT: 30 MHz. Function: for audio amplifier. Housing (JEDEC standard): TO-220. Ic(pulse): 16A. Information: -. MSL: -. Manufacturer's marking: MJE15032G. Max frequency: 30MHz. Max hFE gain: 50. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 50W. Minimum hFE gain: 10. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 50W. Polarity: NPN. Power: 50W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE15033. Type of transistor: NPN. Type: Power. Vcbo: 250V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/08/2025, 21:30

Technical documentation (PDF)
MJE15032G
45 parameters
Collector-Emitter Voltage VCEO
250V
Housing
TO-220
Collector current
8A
Collector current Ic [A], max.
8A
Housing (according to data sheet)
TO-220AB
Collector/emitter voltage Vceo
250V
Assembly/installation
PCB through-hole mounting
BE diode
no
Bandwidth MHz
30MHz
CE diode
no
Collector-Base Voltage VCBO
250V
Collector-emitter voltage Uceo [V]
250V
Component family
high voltage NPN transistor
Configuration
PCB through-hole mounting
Cost)
4pF
Current Max 1
8A
Cutoff frequency ft [MHz]
30 MHz
DC Collector/Base Gain hFE min.
10
FT
30 MHz
Function
for audio amplifier
Housing (JEDEC standard)
TO-220
Ic(pulse)
16A
Manufacturer's marking
MJE15032G
Max frequency
30MHz
Max hFE gain
50
Max temperature
+150°C.
Maximum dissipation Ptot [W]
50W
Minimum hFE gain
10
Mounting Type
PCB through-hole mounting
Number of terminals
3
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
50W
Polarity
NPN
Power
50W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.5V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJE15033
Type of transistor
NPN
Type
Power
Vcbo
250V
Vebo
5V
Original product from manufacturer
ON Semiconductor