NPN transistor MJE13007, TO-220, 8A, TO-220AB, 400V. Housing: TO-220. Collector current: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 8A. Cost): 80pF. FT: 14 MHz. Function: switching circuits. Ic(pulse): 16A. Max hFE gain: 40. Minimum hFE gain: 8. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 80W. Polarity: bipolar. Power: 80W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: High Speed ​​Switching. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Vcbo: 700V. Vebo: 9V. Voltage (collector - emitter): 400V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/07/2025, 22:43