NPN transistor MJE13007-CDIL, 8A, TO-220, TO-220AB, 400V

NPN transistor MJE13007-CDIL, 8A, TO-220, TO-220AB, 400V

Quantity
Unit price
1-4
0.88$
5-24
0.75$
25-49
0.65$
50-99
0.59$
100+
0.51$
Equivalence available
Quantity in stock: 81

NPN transistor MJE13007-CDIL, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 3pF. FT: 14 MHz. Function: switching circuits. Ic(pulse): 16A. Max hFE gain: 40. Minimum hFE gain: 8. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 80W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: High Speed ​​Switching. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Vcbo: 700V. Vebo: 9V. Original product from manufacturer: Cdil. Quantity in stock updated on 11/07/2025, 22:43

Technical documentation (PDF)
MJE13007-CDIL
28 parameters
Collector current
8A
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Collector/emitter voltage Vceo
400V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
3pF
FT
14 MHz
Function
switching circuits
Ic(pulse)
16A
Max hFE gain
40
Minimum hFE gain
8
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
80W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Spec info
High Speed ​​Switching
Technology
Bipolar Power Transistor
Tf(max)
0.7us
Tf(min)
0.23us
Type of transistor
NPN
Vcbo
700V
Vebo
9V
Original product from manufacturer
Cdil

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