NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V - MJD45H11T4G
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 1.15$ | 1.15$ |
| 5 - 9 | 1.09$ | 1.09$ |
| 10 - 24 | 1.06$ | 1.06$ |
| 25 - 49 | 1.03$ | 1.03$ |
| 50 - 99 | 1.01$ | 1.01$ |
| 100 - 151 | 0.88$ | 0.88$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 1.15$ | 1.15$ |
| 5 - 9 | 1.09$ | 1.09$ |
| 10 - 24 | 1.06$ | 1.06$ |
| 25 - 49 | 1.03$ | 1.03$ |
| 50 - 99 | 1.01$ | 1.01$ |
| 100 - 151 | 0.88$ | 0.88$ |
NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V - MJD45H11T4G. NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 45pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Ic(pulse): 16A. Marking on the case: 45H11G. Equivalents: MJD45H11G, MJD45H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Spec info: complementary transistor (pair) MJD45H11T4G. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 07/06/2025, 09:25.
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