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1 - 4 | 1.08$ | 1.08$ |
5 - 9 | 1.03$ | 1.03$ |
10 - 24 | 0.97$ | 0.97$ |
25 - 49 | 0.92$ | 0.92$ |
50 - 99 | 0.90$ | 0.90$ |
100 - 122 | 0.79$ | 0.79$ |
Quantity | U.P | |
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1 - 4 | 1.08$ | 1.08$ |
5 - 9 | 1.03$ | 1.03$ |
10 - 24 | 0.97$ | 0.97$ |
25 - 49 | 0.92$ | 0.92$ |
50 - 99 | 0.90$ | 0.90$ |
100 - 122 | 0.79$ | 0.79$ |
NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V - MJD44H11T4G. NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Collector/emitter voltage Vceo: 80V. Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Ic(pulse): 16A. Marking on the case: 44H11G. Equivalents: MJD44H11G, MJD44H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no. Quantity in stock updated on 19/04/2025, 15:25.
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