| Quantity in stock: 117 |
NPN transistor MD1803DFX, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V
Quantity
Unit price
1-4
2.05$
5-24
1.75$
25-49
1.56$
50-99
1.41$
100+
1.20$
| Equivalence available | |
| Quantity in stock: 85 |
NPN transistor MD1803DFX, 10A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 1500V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 0.55pF. Function: High Voltage Transistor for Standard Definition CRT. Ic(pulse): 15A. Max hFE gain: 7.5. Minimum hFE gain: 5.5. Number of terminals: 3. Pd (Power Dissipation, Max): 57W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.2V. Semiconductor material: silicon. Spec info: -. Temperature: +150°C. Tf(max): 0.25us. Tf(min): 0.25us. Type of transistor: NPN. Vcbo: 700V. Vebo: 10V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/07/2025, 22:43
MD1803DFX
25 parameters
Collector current
10A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
ISOWATT218FX
Collector/emitter voltage Vceo
1500V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
0.55pF
Function
High Voltage Transistor for Standard Definition CRT
Ic(pulse)
15A
Max hFE gain
7.5
Minimum hFE gain
5.5
Number of terminals
3
Pd (Power Dissipation, Max)
57W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.2V
Semiconductor material
silicon
Temperature
+150°C
Tf(max)
0.25us
Tf(min)
0.25us
Type of transistor
NPN
Vcbo
700V
Vebo
10V
Original product from manufacturer
Stmicroelectronics