NPN transistor MD2009DFX, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 700V

NPN transistor MD2009DFX, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 700V

Quantity
Unit price
1-4
1.94$
5-14
1.60$
15-29
1.43$
30+
1.26$
Quantity in stock: 117

NPN transistor MD2009DFX, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 700V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 700V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Function: FAST-SWITCH. Ic(pulse): 16A. Max hFE gain: 18. Minimum hFE gain: 5. Number of terminals: 3. Pd (Power Dissipation, Max): 58W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.3V. Semiconductor material: silicon. Spec info: ICM--16A (tp=5ms). Temperature: +150°C. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Vcbo: 1500V. Vebo: 7V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/07/2025, 22:43

Technical documentation (PDF)
MD2009DFX
25 parameters
Collector current
10A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
TO-3PF
Collector/emitter voltage Vceo
700V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Function
FAST-SWITCH
Ic(pulse)
16A
Max hFE gain
18
Minimum hFE gain
5
Number of terminals
3
Pd (Power Dissipation, Max)
58W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.3V
Semiconductor material
silicon
Spec info
ICM--16A (tp=5ms)
Temperature
+150°C
Tf(max)
0.6us
Tf(min)
0.3us
Type of transistor
NPN
Vcbo
1500V
Vebo
7V
Original product from manufacturer
Stmicroelectronics