| Obsolete product, soon to be removed from the catalog | |
| Out of stock |
NPN transistor KSD2012GTU, 3A, TO-220FP, TO-220, 60V
Quantity
Unit price
1-4
1.57$
5-9
1.38$
10-24
1.23$
25-99
1.12$
100+
0.96$
| Equivalence available | |
| Quantity in stock: 46 |
NPN transistor KSD2012GTU, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 35pF. FT: 3 MHz. Ic(pulse): -. Marking on the case: D2012-G. Max hFE gain: 320. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 150. Number of terminals: 3. Operating temperature: -55°C to +150°C. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) KSB1366. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Vcbo: 60V. Vebo: 7V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:27
KSD2012GTU
25 parameters
Collector current
3A
Housing
TO-220FP
Housing (according to data sheet)
TO-220
Collector/emitter voltage Vceo
60V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
35pF
FT
3 MHz
Marking on the case
D2012-G
Max hFE gain
320
Maximum saturation voltage VCE(sat)
1V
Minimum hFE gain
150
Number of terminals
3
Operating temperature
-55°C to +150°C
Pd (Power Dissipation, Max)
25W
Quantity per case
1
Saturation voltage VCE(sat)
0.4V
Semiconductor material
silicon
Spec info
complementary transistor (pair) KSB1366
Technology
Silicon NPN Triple Diffused Type
Type of transistor
NPN
Vcbo
60V
Vebo
7V
Original product from manufacturer
Fairchild