| Quantity in stock: 46 |
NPN transistor 2SD2012, 3A, TO-220FP, 2-10R1A, 60V
Quantity
Unit price
1-4
1.65$
5-9
1.44$
10-24
1.29$
25-49
1.19$
50+
1.02$
| Obsolete product, soon to be removed from the catalog | |
| Out of stock | |
| Equivalence available |
NPN transistor 2SD2012, 3A, TO-220FP, 2-10R1A, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 60V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 35pF. FT: 3 MHz. Ic(pulse): -. Marking on the case: D2012. Max hFE gain: 300. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SB1366. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Vcbo: 60V. Vebo: 7V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 07:46
2SD2012
24 parameters
Collector current
3A
Housing
TO-220FP
Housing (according to data sheet)
2-10R1A
Collector/emitter voltage Vceo
60V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
35pF
FT
3 MHz
Marking on the case
D2012
Max hFE gain
300
Maximum saturation voltage VCE(sat)
1V
Minimum hFE gain
100
Number of terminals
3
Pd (Power Dissipation, Max)
25W
Quantity per case
1
Saturation voltage VCE(sat)
0.4V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SB1366
Technology
Silicon NPN Triple Diffused Type
Type of transistor
NPN
Vcbo
60V
Vebo
7V
Original product from manufacturer
Toshiba