| Quantity in stock: 56 |
NPN transistor KSC5027-O, 3A, TO-220, TO-220, 800V
Quantity
Unit price
1-4
2.19$
5-24
1.90$
25-49
1.60$
50+
1.45$
| Equivalence available | |
| Quantity in stock: 200 |
NPN transistor KSC5027-O, 3A, TO-220, TO-220, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Conditioning unit: 50. Conditioning: plastic tube. Cost): 60pF. FT: 15 MHz. Function: High Speed Switching. Ic(pulse): 10A. Marking on the case: KSC5027 (O). Max hFE gain: 40. Maximum saturation voltage VCE(sat): 2V. Minimum hFE gain: 20. Number of terminals: 3. Operating temperature: 0...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Temperature: +150°C. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1100V. Original product from manufacturer: Fairchild. Quantity in stock updated on 11/07/2025, 22:43
KSC5027-O
28 parameters
Collector current
3A
Housing
TO-220
Housing (according to data sheet)
TO-220
Collector/emitter voltage Vceo
800V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Conditioning unit
50
Conditioning
plastic tube
Cost)
60pF
FT
15 MHz
Function
High Speed Switching
Ic(pulse)
10A
Marking on the case
KSC5027 (O)
Max hFE gain
40
Maximum saturation voltage VCE(sat)
2V
Minimum hFE gain
20
Number of terminals
3
Operating temperature
0...+150°C
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Temperature
+150°C
Tf(max)
0.3us
Type of transistor
NPN
Vcbo
1100V
Original product from manufacturer
Fairchild