NPN transistor BUL216, 1600V, TO-220, 4A, TO-220, 800V. Collector-Emitter Voltage VCEO: 1600V. Housing: TO-220. Collector current: 4A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Function: high voltage fast switching, for switching power supplies. Ic(pulse): 6A. Max hFE gain: 40. Maximum saturation voltage VCE(sat): 3V. Minimum hFE gain: 10. Pd (Power Dissipation, Max): 90W. Polarity: NPN. Power: 90W. Quantity per case: 1. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Temperature: +150°C. Tf(max): 720 ns. Tf(min): 450 ns. Type of transistor: NPN. Vcbo: 1600V. Vebo: 9V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/07/2025, 22:43