NPN-Transistor KSB1366GTU, 3A, TO-220FP, TO-220, 60V

NPN-Transistor KSB1366GTU, 3A, TO-220FP, TO-220, 60V

Quantity
Unit price
1-4
1.72$
5-9
1.50$
10-24
1.34$
25-99
1.22$
100+
1.04$
Equivalence available
Quantity in stock: 73

NPN-Transistor KSB1366GTU, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 35pF. FT: 9 MHz. Ic(pulse): -. Marking on the case: B1366-G. Max hFE gain: 320. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 150. Number of terminals: 3. Operating temperature: -55°C to +150°C. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) KSD2012. Technology: Silicon PNP Triple Diffused Type. Type of transistor: PNP. Vcbo: 60V. Vebo: 7V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:52

Technical documentation (PDF)
KSB1366GTU
25 parameters
Collector current
3A
Housing
TO-220FP
Housing (according to data sheet)
TO-220
Collector/emitter voltage Vceo
60V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
35pF
FT
9 MHz
Marking on the case
B1366-G
Max hFE gain
320
Maximum saturation voltage VCE(sat)
1V
Minimum hFE gain
150
Number of terminals
3
Operating temperature
-55°C to +150°C
Pd (Power Dissipation, Max)
25W
Quantity per case
1
Saturation voltage VCE(sat)
0.4V
Semiconductor material
silicon
Spec info
complementary transistor (pair) KSD2012
Technology
Silicon PNP Triple Diffused Type
Type of transistor
PNP
Vcbo
60V
Vebo
7V
Original product from manufacturer
Fairchild

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