Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.55$ | 1.55$ |
2 - 2 | 1.48$ | 1.48$ |
3 - 4 | 1.40$ | 1.40$ |
5 - 9 | 1.37$ | 1.37$ |
10 - 21 | 1.32$ | 1.32$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.55$ | 1.55$ |
2 - 2 | 1.48$ | 1.48$ |
3 - 4 | 1.40$ | 1.40$ |
5 - 9 | 1.37$ | 1.37$ |
10 - 21 | 1.32$ | 1.32$ |
NPN transistor, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V - BFS20. NPN transistor, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. Collector current: 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 450 MHz. Function: 'IF and VHF thick and thin-film circuit'. Max hFE gain: 140. Minimum hFE gain: 40. Ic(pulse): 25mA. Note: screen printing/SMD code G1p, G1t, G1W. Marking on the case: G1*. Number of terminals: 3. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 30 v. Vebo: 4 v. Original product from manufacturer Diodes Inc.. Quantity in stock updated on 08/06/2025, 16:25.
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