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10 - 24 | 0.29$ | 0.29$ |
25 - 49 | 0.28$ | 0.28$ |
50 - 99 | 0.27$ | 0.27$ |
100 - 249 | 0.26$ | 0.26$ |
250 - 499 | 0.25$ | 0.25$ |
500 - 1680 | 0.24$ | 0.24$ |
NPN transistor, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V - BFR93A. NPN transistor, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V. Collector current: 35mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 12V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 6GHz. Function: UHF-A, RF wideband amplifiers and oscillators.. Max hFE gain: 90. Minimum hFE gain: 40. Marking on the case: R2. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Spec info: SMD R2. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 15V. Vebo: 2V. Original product from manufacturer Philips Semiconductors. Quantity in stock updated on 08/06/2025, 15:25.
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