NPN transistor BD679A, TO-126 (TO-225, SOT-32), 4A, 4A, TO-126, 80V

NPN transistor BD679A, TO-126 (TO-225, SOT-32), 4A, 4A, TO-126, 80V

Quantity
Unit price
1-4
0.62$
5-24
0.52$
25-49
0.45$
50-99
0.39$
100+
0.31$
Equivalence available
Quantity in stock: 60

NPN transistor BD679A, TO-126 (TO-225, SOT-32), 4A, 4A, TO-126, 80V. Housing: TO-126 (TO-225, SOT-32). Collector current Ic [A], max.: 4A. Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. CE diode: yes. Collector-emitter voltage Uceo [V]: 80V. Component family: Darlington NPN Power Transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: -. Darlington transistor?: yes. FT: 10 MHz. Housing (JEDEC standard): TO-225. Ic(pulse): 6A. Manufacturer's marking: BD679A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 40W. Minimum hFE gain: 750. Number of terminals: 3. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 2.8V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BD680A. Temperature: +150°C. Type of transistor: NPN. Vcbo: 80V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
BD679A
33 parameters
Housing
TO-126 (TO-225, SOT-32)
Collector current Ic [A], max.
4A
Collector current
4A
Housing (according to data sheet)
TO-126
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
BE resistor
R1 typ=15k Ohms, R2 typ=100 Ohms
CE diode
yes
Collector-emitter voltage Uceo [V]
80V
Component family
Darlington NPN Power Transistor
Configuration
PCB through-hole mounting
Darlington transistor?
yes
FT
10 MHz
Housing (JEDEC standard)
TO-225
Ic(pulse)
6A
Manufacturer's marking
BD679A
Max temperature
+150°C.
Maximum dissipation Ptot [W]
40W
Minimum hFE gain
750
Number of terminals
3
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
40W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
2.8V
Semiconductor material
silicon
Spec info
complementary transistor (pair) BD680A
Temperature
+150°C
Type of transistor
NPN
Vcbo
80V
Original product from manufacturer
Stmicroelectronics

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