NPN transistor BD681, TO-126 (TO-225, SOT-32), 100V, 4A, 4A, TO-126, 100V
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NPN transistor BD681, TO-126 (TO-225, SOT-32), 100V, 4A, 4A, TO-126, 100V. Housing: TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: 100V. Collector current Ic [A], max.: 4A. Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Built-in diode: yes. CE diode: yes. Collector current Ic [A]: 4A. Collector-Base Voltage VCBO: 100V. Collector-emitter voltage Uceo [V]: 100V. Component family: Darlington NPN Power Transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: 4A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 750. Darlington transistor?: yes. FT: 10 MHz. Gain hfe: 750. Housing (JEDEC standard): SOT-32. Ic(pulse): 6A. Information: -. MSL: -. Manufacturer's marking: BD681. Max hFE gain: 750. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 40W. Maximum saturation voltage VCE(sat): 2.5V. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Polarity: bipolar. Power: 40W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Series: BD681. Spec info: complementary transistor (pair) BD682. Type of transistor: NPN. Type: Darlington transistor. Vcbo: 100V. Vebo: 5V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14