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| Quantity in stock: 136 |
NPN transistor BD441, TO-126 (TO-225, SOT-32), 80V, 4A, SOT-32, 80V
Quantity
Unit price
1-4
0.60$
5-24
0.51$
25-49
0.45$
50-99
0.42$
100+
0.37$
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| Obsolete product, soon to be removed from the catalog. Last items available | |
| Equivalence available | |
| Quantity in stock: 100 |
NPN transistor BD441, TO-126 (TO-225, SOT-32), 80V, 4A, SOT-32, 80V. Housing: TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: 80V. Collector current: 4A. Housing (according to data sheet): SOT-32. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. Bandwidth MHz: 3MHz. Collector current Ic [A]: 4A. Collector-Base Voltage VCBO: 80V. Conditioning: tubus. Current Max 1: 4A. DC Collector/Base Gain hFE min.: 15. Darlington transistor?: no. FT: 3 MHz. Frequency: 3MHz. Function: NF-L. Gain hfe: 15...40. Ic(pulse): 7A. Information: -. MSL: -. Max frequency: 3MHz. Max hFE gain: 130. Minimum hFE gain: 20. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. Polarity: bipolar. Power: 36W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.8V. Semiconductor material: silicon. Series: BD. Temperature: +150°C. Type of transistor: NPN. Type: Power. Vcbo: 80V. Voltage (collector - emitter): 80V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14
BD441
37 parameters
Housing
TO-126 (TO-225, SOT-32)
Collector-Emitter Voltage VCEO
80V
Collector current
4A
Housing (according to data sheet)
SOT-32
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
Bandwidth MHz
3MHz
Collector current Ic [A]
4A
Collector-Base Voltage VCBO
80V
Conditioning
tubus
Current Max 1
4A
DC Collector/Base Gain hFE min.
15
Darlington transistor?
no
FT
3 MHz
Frequency
3MHz
Function
NF-L
Gain hfe
15...40
Ic(pulse)
7A
Max frequency
3MHz
Max hFE gain
130
Minimum hFE gain
20
Mounting Type
PCB through-hole mounting
Number of terminals
3
Pd (Power Dissipation, Max)
36W
Polarity
bipolar
Power
36W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.8V
Semiconductor material
silicon
Series
BD
Temperature
+150°C
Type of transistor
NPN
Type
Power
Vcbo
80V
Voltage (collector - emitter)
80V
Original product from manufacturer
Stmicroelectronics