NPN transistor MJE243G, 100V, TO-126 (TO-225, SOT-32), 4mA, 4A, TO-225, 100V. Collector-Emitter Voltage VCEO: 100V. Housing: TO-126 (TO-225, SOT-32). Collector current Ic [A], max.: 4mA. Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector-emitter voltage Uceo [V]: 100V. Component family: NPN power transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 40 MHz. FT: 40 MHz. Function: High speed switching. Audio. Housing (JEDEC standard): TO-225. Ic(pulse): 8A. Manufacturer's marking: MJE243G. Max frequency: 40MHz. Max hFE gain: 180. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.015W. Minimum hFE gain: 40. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 15W. Polarity: NPN. Power: 15W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJE253. Type of transistor: NPN. Vcbo: 100V. Vebo: 7V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 11/06/2025, 09:45