NPN-Transistor BD140-16, TO-126 (TO-225, SOT-32), 1.5A, SOT-32, -80V, 80V, 1.5A, TO-126, 80V

NPN-Transistor BD140-16, TO-126 (TO-225, SOT-32), 1.5A, SOT-32, -80V, 80V, 1.5A, TO-126, 80V

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Unit price
1-4
0.32$
5-49
0.26$
50-99
0.23$
100-199
0.21$
200+
0.18$
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Quantity in stock: 502

NPN-Transistor BD140-16, TO-126 (TO-225, SOT-32), 1.5A, SOT-32, -80V, 80V, 1.5A, TO-126, 80V. Housing: TO-126 (TO-225, SOT-32). Collector current: 1.5A. Housing (JEDEC standard): SOT-32. Collector-Emitter Voltage VCEO: -80V. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 1.5A. Collector-Base Voltage VCBO: -80V. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Current Max 1: -1.5A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 100. FT: 50 MHz. Frequency: 160MHz. Function: NF-L. Ic(pulse): 3A. Information: -. MSL: -. Manufacturer's marking: BD140-16. Max frequency: 50MHz. Max hFE gain: 250. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 12.5W. Minimum hFE gain: 100. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Polarity: bipolar. Power: 12.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Series: BD. Spec info: complementary transistor (pair) BD139-16. Type of transistor: PNP. Type: Power. Vcbo: 80V. Voltage (collector - emitter): 80V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:12

Technical documentation (PDF)
BD140-16
44 parameters
Housing
TO-126 (TO-225, SOT-32)
Collector current
1.5A
Housing (JEDEC standard)
SOT-32
Collector-Emitter Voltage VCEO
-80V
Collector-emitter voltage Uceo [V]
80V
Collector current Ic [A], max.
1.5A
Housing (according to data sheet)
TO-126
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
1.5A
Collector-Base Voltage VCBO
-80V
Component family
PNP power transistor
Configuration
PCB through-hole mounting
Current Max 1
-1.5A
DC Collector/Base Gain hFE min.
100
FT
50 MHz
Frequency
160MHz
Function
NF-L
Ic(pulse)
3A
Manufacturer's marking
BD140-16
Max frequency
50MHz
Max hFE gain
250
Max temperature
+150°C.
Maximum dissipation Ptot [W]
12.5W
Minimum hFE gain
100
Mounting Type
PCB through-hole mounting
Number of terminals
3
Number of terminals
3
Pd (Power Dissipation, Max)
12.5W
Polarity
bipolar
Power
12.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.5V
Semiconductor material
silicon
Series
BD
Spec info
complementary transistor (pair) BD139-16
Type of transistor
PNP
Type
Power
Vcbo
80V
Voltage (collector - emitter)
80V
Original product from manufacturer
Stmicroelectronics

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