NPN-Transistor BD140, TO-126 (TO-225, SOT-32), -100V, 1.5A, SOT-32, 80V, 1.5A, TO-126, 80V. Housing: TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: -100V. Collector current: 1.5A. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 1.5A. Component family: PNP power transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: -. FT: 50 MHz. Frequency: 50MHz. Function: NF-L. Ic(pulse): 3A. Manufacturer's marking: BD140. Max frequency: 50MHz. Max hFE gain: 250. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 12.5W. Minimum hFE gain: 25. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Polarity: bipolar. Power: 12W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BD139. Technology: 'Epitaxial Planar Transistor'. Temperature: +150°C. Type of transistor: PNP. Vcbo: 80V. Vebo: 5V. Voltage (collector - emitter): 80V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:12