NPN transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V - BCX41E6327
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 9 | 0.25$ | 0.25$ |
| 10 - 24 | 0.23$ | 0.23$ |
| 25 - 49 | 0.22$ | 0.22$ |
| 50 - 99 | 0.21$ | 0.21$ |
| 100 - 249 | 0.20$ | 0.20$ |
| 250 - 259 | 0.17$ | 0.17$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 9 | 0.25$ | 0.25$ |
| 10 - 24 | 0.23$ | 0.23$ |
| 25 - 49 | 0.22$ | 0.22$ |
| 50 - 99 | 0.21$ | 0.21$ |
| 100 - 249 | 0.20$ | 0.20$ |
| 250 - 259 | 0.17$ | 0.17$ |
NPN transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V - BCX41E6327. NPN transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 125V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NPN-transistor. AF applications and switching. Max hFE gain: 63. Minimum hFE gain: 25. Ic(pulse): 1A. Marking on the case: EKs. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...150°C. Vcbo: 125V. Maximum saturation voltage VCE(sat): 0.9V. Vebo: 5V. Spec info: complementary transistor (pair) BCX42. BE diode: no. CE diode: no. Quantity in stock updated on 20/04/2025, 19:25.
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