NPN transistor BCP55-16, 1A, SOT-223 ( TO-226 ), SOT-223, 60V

NPN transistor BCP55-16, 1A, SOT-223 ( TO-226 ), SOT-223, 60V

Quantity
Unit price
1-4
0.15$
5-49
0.13$
50-99
0.11$
100-499
0.0987$
500+
0.0846$
Equivalence available
Quantity in stock: 833

NPN transistor BCP55-16, 1A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 25pF. FT: 150 MHz. Function: Audio, telephony and automotive applications. Ic(pulse): 2A. Marking on the case: BCP 5516. Max hFE gain: 250. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 100. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 2W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: complementary transistor (pair) BCP52-16. Type of transistor: NPN. Vcbo: 60V. Vebo: 5V. Original product from manufacturer: Diodes Inc. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
BCP55-16
26 parameters
Collector current
1A
Housing
SOT-223 ( TO-226 )
Housing (according to data sheet)
SOT-223
Collector/emitter voltage Vceo
60V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Cost)
25pF
FT
150 MHz
Function
Audio, telephony and automotive applications
Ic(pulse)
2A
Marking on the case
BCP 5516
Max hFE gain
250
Maximum saturation voltage VCE(sat)
0.5V
Minimum hFE gain
100
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
2W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
complementary transistor (pair) BCP52-16
Type of transistor
NPN
Vcbo
60V
Vebo
5V
Original product from manufacturer
Diodes Inc.

Equivalent products and/or accessories for BCP55-16