NPN transistor BCP56-16, 1A, SOT-223 ( TO-226 ), SOT-223, 80V

NPN transistor BCP56-16, 1A, SOT-223 ( TO-226 ), SOT-223, 80V

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Unit price
1-4
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5-49
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50-99
0.12$
100-499
0.10$
500+
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Quantity in stock: 368

NPN transistor BCP56-16, 1A, SOT-223 ( TO-226 ), SOT-223, 80V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 80V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 6pF. FT: 180 MHz. Function: Audio, telephony and automotive applications. Ic(pulse): 2A. Marking on the case: BCP56/16. Max hFE gain: 250. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 100. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1.35W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: complementary transistor (pair) BCP53-16. Type of transistor: NPN. Vcbo: 100V. Vebo: 5V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
BCP56-16
26 parameters
Collector current
1A
Housing
SOT-223 ( TO-226 )
Housing (according to data sheet)
SOT-223
Collector/emitter voltage Vceo
80V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Cost)
6pF
FT
180 MHz
Function
Audio, telephony and automotive applications
Ic(pulse)
2A
Marking on the case
BCP56/16
Max hFE gain
250
Maximum saturation voltage VCE(sat)
0.5V
Minimum hFE gain
100
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
1.35W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
complementary transistor (pair) BCP53-16
Type of transistor
NPN
Vcbo
100V
Vebo
5V
Original product from manufacturer
Nxp Semiconductors