Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.82$ | 2.82$ |
5 - 9 | 2.68$ | 2.68$ |
10 - 24 | 2.60$ | 2.60$ |
25 - 49 | 2.54$ | 2.54$ |
50 - 99 | 2.48$ | 2.48$ |
100 - 249 | 2.40$ | 2.40$ |
250+ | 2.31$ | 2.31$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.82$ | 2.82$ |
5 - 9 | 2.68$ | 2.68$ |
10 - 24 | 2.60$ | 2.60$ |
25 - 49 | 2.54$ | 2.54$ |
50 - 99 | 2.48$ | 2.48$ |
100 - 249 | 2.40$ | 2.40$ |
250+ | 2.31$ | 2.31$ |
NPN transistor, 1.5A, TO-126F, TO-126F, 490V - 3DD4202BD. NPN transistor, 1.5A, TO-126F, TO-126F, 490V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 490V. BE diode: no. CE diode: yes. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 20. Minimum hFE gain: 16. Ic(pulse): 3A. Marking on the case: 4202BD. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Tf(min): 0.7us. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.18V. Vebo: 13V. Original product from manufacturer Jilin Sino-microelectronics Co.. Quantity in stock updated on 08/06/2025, 11:25.
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