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NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V - 2SD1398

NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V - 2SD1398
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.34$ 2.34$
5 - 9 2.22$ 2.22$
10 - 24 2.10$ 2.10$
25 - 48 1.99$ 1.99$
Quantity U.P
1 - 4 2.34$ 2.34$
5 - 9 2.22$ 2.22$
10 - 24 2.10$ 2.10$
25 - 48 1.99$ 1.99$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 48
Set of 1

NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V - 2SD1398. NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 5A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Quantity in stock updated on 20/04/2025, 01:25.

Equivalent products :

Quantity in stock : 19
2SD1398-SAN

2SD1398-SAN

NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 5A. Housing: TO-3P ( TO...
2SD1398-SAN
NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 5A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Conditioning: plastic tube. Conditioning unit: 30. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar'. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 7V
2SD1398-SAN
NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 5A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Conditioning: plastic tube. Conditioning unit: 30. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar'. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 7V
Set of 1
2.87$ VAT incl.
(2.87$ excl. VAT)
2.87$

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