NPN transistor 2SC5707, 8A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 80V

NPN transistor 2SC5707, 8A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 80V

Quantity
Unit price
1-4
0.95$
5-24
0.83$
25-49
0.75$
50-99
0.65$
100+
0.50$
Equivalence available
Quantity in stock: 895

NPN transistor 2SC5707, 8A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 80V. Collector current: 8A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Conditioning unit: 100dB. Conditioning: plastic tube. FT: 330 MHz. Function: DC-DC converter, TFT power supply. Ic(pulse): 11A. Marking on the case: C5707. Max hFE gain: 560. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.11V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA2040. Temperature: +150°C. Tf(max): 25 ns. Tf(min): 25 ns. Type of transistor: NPN. Vcbo: 80V. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 08:53

Technical documentation (PDF)
2SC5707
28 parameters
Collector current
8A
Housing
TO-251 ( I-Pak )
Housing (according to data sheet)
TO-251AA ( I-PAK )
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Conditioning unit
100dB
Conditioning
plastic tube
FT
330 MHz
Function
DC-DC converter, TFT power supply
Ic(pulse)
11A
Marking on the case
C5707
Max hFE gain
560
Minimum hFE gain
200
Number of terminals
3
Pd (Power Dissipation, Max)
15W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.11V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SA2040
Temperature
+150°C
Tf(max)
25 ns
Tf(min)
25 ns
Type of transistor
NPN
Vcbo
80V
Original product from manufacturer
Sanyo

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