NPN transistor 2SC5707FA, 8A, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 80V

NPN transistor 2SC5707FA, 8A, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 80V

Quantity
Unit price
1-4
0.90$
5-24
0.72$
25-49
0.64$
50+
0.56$
Quantity in stock: 212

NPN transistor 2SC5707FA, 8A, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Collector/emitter voltage Vceo: 80V. Assembly/installation: surface-mounted component (SMD). FT: 330 MHz. Function: DC-DC converter, TFT power supply. Ic(pulse): 11A. Marking on the case: C5707T. Max hFE gain: 560. Minimum hFE gain: 200. Number of terminals: 2. Pd (Power Dissipation, Max): 15W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.11V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA2040FA. Technology: 'Epitaxial Planar Silicon Transistor'. Temperature: +150°C. Tf(max): 25 ns. Tf(min): 25 ns. Type of transistor: NPN. Vcbo: 80V. Vebo: 6V. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 08:53

Technical documentation (PDF)
2SC5707FA
26 parameters
Collector current
8A
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Collector/emitter voltage Vceo
80V
Assembly/installation
surface-mounted component (SMD)
FT
330 MHz
Function
DC-DC converter, TFT power supply
Ic(pulse)
11A
Marking on the case
C5707T
Max hFE gain
560
Minimum hFE gain
200
Number of terminals
2
Pd (Power Dissipation, Max)
15W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.11V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SA2040FA
Technology
'Epitaxial Planar Silicon Transistor'
Temperature
+150°C
Tf(max)
25 ns
Tf(min)
25 ns
Type of transistor
NPN
Vcbo
80V
Vebo
6V
Original product from manufacturer
Sanyo