| Quantity in stock: 131 |
NPN transistor 2SC5386, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 600V
Quantity
Unit price
1-4
4.30$
5-9
4.01$
10-29
3.79$
30-59
3.58$
60+
3.17$
| Equivalence available | |
| Quantity in stock: 17 |
NPN transistor 2SC5386, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 600V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. Conditioning unit: 30. Conditioning: plastic tube. FT: 1.7 MHz. Function: High Switching, Horizontal Deflection out. Ic(pulse): 16A. Marking on the case: C5386. Max hFE gain: 35. Minimum hFE gain: 4.3. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Spec info: MONITOR Hi-res. Technology: 'Triple Diffused MESA Type'. Temperature: +150°C. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:53
2SC5386
28 parameters
Collector current
8A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
TO-3PF
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
Conditioning unit
30
Conditioning
plastic tube
FT
1.7 MHz
Function
High Switching, Horizontal Deflection out
Ic(pulse)
16A
Marking on the case
C5386
Max hFE gain
35
Minimum hFE gain
4.3
Number of terminals
3
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
3V
Semiconductor material
silicon
Spec info
MONITOR Hi-res
Technology
'Triple Diffused MESA Type'
Temperature
+150°C
Tf(max)
0.3us
Tf(min)
0.15us
Type of transistor
NPN
Vcbo
1500V
Vebo
5V
Original product from manufacturer
Toshiba
Equivalent products and/or accessories for 2SC5386
| Obsolete product, soon to be removed from the catalog | |
| Out of stock |