NPN transistor KSC5386TU, 7A, TO-3PF (SOT399), TO-3PF, 800V

NPN transistor KSC5386TU, 7A, TO-3PF (SOT399), TO-3PF, 800V

Quantity
Unit price
1-4
8.26$
5-9
7.51$
10-19
7.11$
20+
6.83$
Obsolete product, soon to be removed from the catalog
Out of stock

NPN transistor KSC5386TU, 7A, TO-3PF (SOT399), TO-3PF, 800V. Collector current: 7A. Housing: TO-3PF (SOT399). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: 10. CE diode: yes. Conditioning unit: 30. Conditioning: plastic tube. FT: kHz. Function: High Switching 0.1us. Ic(pulse): 16A. Marking on the case: C5386. Max hFE gain: 22. Minimum hFE gain: 8. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 4.2V. Semiconductor material: silicon. Spec info: VEBO 6V. Technology: 'Triple Diffused Planar Silicon Transistor'. Temperature: +150°C. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Vebo: 6V. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
KSC5386TU
30 parameters
Collector current
7A
Housing
TO-3PF (SOT399)
Housing (according to data sheet)
TO-3PF
Collector/emitter voltage Vceo
800V
Assembly/installation
PCB through-hole mounting
BE diode
no
BE resistor
10
CE diode
yes
Conditioning unit
30
Conditioning
plastic tube
FT
kHz
Function
High Switching 0.1us
Ic(pulse)
16A
Marking on the case
C5386
Max hFE gain
22
Minimum hFE gain
8
Number of terminals
3
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
4.2V
Semiconductor material
silicon
Spec info
VEBO 6V
Technology
'Triple Diffused Planar Silicon Transistor'
Temperature
+150°C
Tf(max)
0.2us
Tf(min)
0.1us
Type of transistor
NPN
Vcbo
1500V
Vebo
6V