NPN transistor 2SC5200, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V

NPN transistor 2SC5200, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V

Quantity
Unit price
1-4
7.02$
5-24
6.16$
25-49
5.50$
50-99
5.00$
100+
4.29$
Equivalence available
Quantity in stock: 178

NPN transistor 2SC5200, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 200pF. FT: 30 MHz. Function: HI-FI Power Amplifier. Marking on the case: C5200 (Q). Max hFE gain: 160. Minimum hFE gain: 80. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA1943. Technology: 'Triple Diffused Planar Transistor'. Temperature: +150°C. Type of transistor: NPN. Vcbo: 230V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:53

Technical documentation (PDF)
2SC5200
27 parameters
Collector current
15A
Housing
TO-264 ( TOP-3L )
Housing (according to data sheet)
TO-264 ( 2-21F1A )
Collector/emitter voltage Vceo
230V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
200pF
FT
30 MHz
Function
HI-FI Power Amplifier
Marking on the case
C5200 (Q)
Max hFE gain
160
Minimum hFE gain
80
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
150W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.4V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SA1943
Technology
'Triple Diffused Planar Transistor'
Temperature
+150°C
Type of transistor
NPN
Vcbo
230V
Vebo
5V
Original product from manufacturer
Toshiba

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