NPN transistor MJL21194, TO-264 ( TOP-3L ), 16A, TO–3PBL, 250V

NPN transistor MJL21194, TO-264 ( TOP-3L ), 16A, TO–3PBL, 250V

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Unit price
1-4
7.79$
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6.93$
10-24
6.29$
25-49
5.74$
50+
5.10$
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Quantity in stock: 126

NPN transistor MJL21194, TO-264 ( TOP-3L ), 16A, TO–3PBL, 250V. Housing: TO-264 ( TOP-3L ). Collector current: 16A. Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 16A. Conditioning: tubus. Cost): 6pF. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Ic(pulse): 30A. Max hFE gain: 75. Minimum hFE gain: 25. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 200W. Polarity: bipolar. Power: 200W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJL21193. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Vcbo: 400V. Vebo: 5V. Voltage (collector - emitter): 250V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
MJL21194
31 parameters
Housing
TO-264 ( TOP-3L )
Collector current
16A
Housing (according to data sheet)
TO–3PBL
Collector/emitter voltage Vceo
250V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
16A
Conditioning
tubus
Cost)
6pF
FT
4 MHz
Function
hFE=25 Min @ IC=8Adc
Ic(pulse)
30A
Max hFE gain
75
Minimum hFE gain
25
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
200W
Polarity
bipolar
Power
200W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.4V
Semiconductor material
silicon
Spec info
complementary transistor (pair) MJL21193
Technology
'Epitaxial-Base'
Type of transistor
NPN
Vcbo
400V
Vebo
5V
Voltage (collector - emitter)
250V
Original product from manufacturer
ON Semiconductor

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