| Quantity in stock: 4329 |
NPN-Transistor 2SA965, 0.8A, TO-92, TO-92M ( 9mm ), 120V
Quantity
Unit price
1-4
1.93$
5-9
1.78$
10-24
1.69$
25-49
1.59$
50+
1.46$
| Equivalence available | |
| Quantity in stock: 22 |
NPN-Transistor 2SA965, 0.8A, TO-92, TO-92M ( 9mm ), 120V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 120 MHz. Function: PCT Process. Max hFE gain: 240. Minimum hFE gain: 80. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Quantity per case: 1. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SC2235-Y. Technology: 'Epitaxial Type'. Temperature: +150°C. Type of transistor: PNP. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 07:35
2SA965
23 parameters
Collector current
0.8A
Housing
TO-92
Housing (according to data sheet)
TO-92M ( 9mm )
Collector/emitter voltage Vceo
120V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
FT
120 MHz
Function
PCT Process
Max hFE gain
240
Minimum hFE gain
80
Number of terminals
3
Pd (Power Dissipation, Max)
0.9W
Quantity per case
1
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SC2235-Y
Technology
'Epitaxial Type'
Temperature
+150°C
Type of transistor
PNP
Vcbo
120V
Vebo
5V
Original product from manufacturer
Toshiba
Equivalent products and/or accessories for 2SA965
| Quantity in stock: 172 |