NPN-Transistor 2SB647, 1A, TO-92, TO-92M ( 9mm ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 140 MHz. Function: general purpose. Ic(pulse): 2A. Marking on the case: B647. Max hFE gain: 200. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SD667. Temperature: +150°C. Type of transistor: PNP. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: Renesas Technology. Quantity in stock updated on 10/31/2025, 09:09