NPN transistor 2N6284, 20A, TO-3 ( TO-204 ), TO-3, 100V

NPN transistor 2N6284, 20A, TO-3 ( TO-204 ), TO-3, 100V

Quantity
Unit price
1-4
9.84$
5-9
9.11$
10-24
8.61$
25-49
8.27$
50+
7.63$
Equivalence available
Quantity in stock: 98

NPN transistor 2N6284, 20A, TO-3 ( TO-204 ), TO-3, 100V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: 8k Ohms (R1), 60 Ohms (R2). CE diode: yes. Cost): 400pF. Darlington transistor?: yes. FT: kHz. Function: hFE 750...180000. Ic(pulse): 40A. Max hFE gain: 18000. Minimum hFE gain: 750. Number of terminals: 2. Operating temperature: -65...+200°C. Pd (Power Dissipation, Max): 160W. Quantity per case: 2. RoHS: yes. Saturation voltage VCE(sat): 2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2N6287. Type of transistor: NPN. Vcbo: 100V. Vebo: 5V. Weight: 11.8g. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 07:27

Technical documentation (PDF)
2N6284
28 parameters
Collector current
20A
Housing
TO-3 ( TO-204 )
Housing (according to data sheet)
TO-3
Collector/emitter voltage Vceo
100V
Assembly/installation
PCB through-hole mounting
BE diode
no
BE resistor
8k Ohms (R1), 60 Ohms (R2)
CE diode
yes
Cost)
400pF
Darlington transistor?
yes
FT
kHz
Function
hFE 750...180000
Ic(pulse)
40A
Max hFE gain
18000
Minimum hFE gain
750
Number of terminals
2
Operating temperature
-65...+200°C
Pd (Power Dissipation, Max)
160W
Quantity per case
2
RoHS
yes
Saturation voltage VCE(sat)
2V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2N6287
Type of transistor
NPN
Vcbo
100V
Vebo
5V
Weight
11.8g
Original product from manufacturer
ON Semiconductor

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