NPN transistor MJ11016G, TO-3 ( TO-204 ), 30A, 30A, TO-3 ( TO-204 ), 120V. Housing: TO-3 ( TO-204 ). Collector current Ic [A], max.: 30A. Collector current: 30A. Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 4pF. CE diode: no. Collector-emitter voltage Uceo [V]: 120V. Component family: Darlington NPN Power Transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: -. Darlington transistor?: yes. FT: 4 MHz. Housing (JEDEC standard): TO-204AA. Manufacturer's marking: MJ11016G. Max temperature: +200°C.. Maximum dissipation Ptot [W]: 200W. Minimum hFE gain: 1000. Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Number of terminals: 3. Operating temperature: -55...+200°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) MJ11015. Type of transistor: NPN. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 08:52