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Semiconductors Transistors
N-P MOSFET transistor pair

N-P MOSFET transistor pair

54 products available
Products per page :
12 3
Quantity in stock : 225
FDS8962C

FDS8962C

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS:...
FDS8962C
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: dual MOSFET transistor. N and P channels. 'PowerTrench'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Q1 N-Ch 7A, 30V RDS(on)=0.030 Ohms, Vgs=10V. Spec info: Q2 P-Ch, 5A, 30V RDS(on)=0.052 Ohms, Vgs=10V
FDS8962C
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: dual MOSFET transistor. N and P channels. 'PowerTrench'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Q1 N-Ch 7A, 30V RDS(on)=0.030 Ohms, Vgs=10V. Spec info: Q2 P-Ch, 5A, 30V RDS(on)=0.052 Ohms, Vgs=10V
Set of 1
1.88$ VAT incl.
(1.88$ excl. VAT)
1.88$
Quantity in stock : 1
FMY4T148

FMY4T148

MOSFET transistor. Channel type: N-P. Function: Y4. Marking on the case: Y4. RoHS: yes. Assembly/ins...
FMY4T148
MOSFET transistor. Channel type: N-P. Function: Y4. Marking on the case: Y4. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMT5. Quantity per case: 2
FMY4T148
MOSFET transistor. Channel type: N-P. Function: Y4. Marking on the case: Y4. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SMT5. Quantity per case: 2
Set of 1
2.70$ VAT incl.
(2.70$ excl. VAT)
2.70$
Quantity in stock : 21
HGTG30N60B3D

HGTG30N60B3D

MOSFET transistor. Channel type: N-P. Function: Ic 30A @ 25°C, 25A @ 110°C, Icm 220A (pulsed). Num...
HGTG30N60B3D
MOSFET transistor. Channel type: N-P. Function: Ic 30A @ 25°C, 25A @ 110°C, Icm 220A (pulsed). Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 137 ns. Td(on): 36ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.45V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.2V. Gate/emitter voltage VGE(th)max.: 6V. CE diode: no. Germanium diode: no
HGTG30N60B3D
MOSFET transistor. Channel type: N-P. Function: Ic 30A @ 25°C, 25A @ 110°C, Icm 220A (pulsed). Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 137 ns. Td(on): 36ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.45V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.2V. Gate/emitter voltage VGE(th)max.: 6V. CE diode: no. Germanium diode: no
Set of 1
11.96$ VAT incl.
(11.96$ excl. VAT)
11.96$
Quantity in stock : 30
HGTG40N60B3

HGTG40N60B3

MOSFET transistor. Channel type: N-P. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Num...
HGTG40N60B3
MOSFET transistor. Channel type: N-P. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 47 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. CE diode: no. Germanium diode: no
HGTG40N60B3
MOSFET transistor. Channel type: N-P. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 47 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. CE diode: no. Germanium diode: no
Set of 1
15.64$ VAT incl.
(15.64$ excl. VAT)
15.64$
Quantity in stock : 55
IRF7101

IRF7101

MOSFET transistor. Function: 2xN-CH 20V, Fast Switching. Number of terminals: 8. RoHS: yes. Assembly...
IRF7101
MOSFET transistor. Function: 2xN-CH 20V, Fast Switching. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
IRF7101
MOSFET transistor. Function: 2xN-CH 20V, Fast Switching. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
0.83$ VAT incl.
(0.83$ excl. VAT)
0.83$
Quantity in stock : 184
IRF7309

IRF7309

MOSFET transistor. Channel type: N-P. Function: 0.05R & 0.1R. ID (T=25°C): 4.7A & 3.5A. Number of t...
IRF7309
MOSFET transistor. Channel type: N-P. Function: 0.05R & 0.1R. ID (T=25°C): 4.7A & 3.5A. Number of terminals: 8. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 2
IRF7309
MOSFET transistor. Channel type: N-P. Function: 0.05R & 0.1R. ID (T=25°C): 4.7A & 3.5A. Number of terminals: 8. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 2
Set of 1
0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
Quantity in stock : 4026
IRF7317

IRF7317

MOSFET transistor. C(in): 780pF. Cost): 430pF. Channel type: N-P. Trr Diode (Min.): 47 ns. Function:...
IRF7317
MOSFET transistor. C(in): 780pF. Cost): 430pF. Channel type: N-P. Trr Diode (Min.): 47 ns. Function: 0.029R & 0.58R. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Drain-source protection : yes. G-S Protection: no
IRF7317
MOSFET transistor. C(in): 780pF. Cost): 430pF. Channel type: N-P. Trr Diode (Min.): 47 ns. Function: 0.029R & 0.58R. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Drain-source protection : yes. G-S Protection: no
Set of 1
1.31$ VAT incl.
(1.31$ excl. VAT)
1.31$
Quantity in stock : 44
IRF7319

IRF7319

MOSFET transistor. Channel type: N-P. Marking on the case: F7319. Number of terminals: 8. Pd (Power ...
IRF7319
MOSFET transistor. Channel type: N-P. Marking on the case: F7319. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Note: ( = P23AF 4532 SMD ). Note: Rds-on 0.029 Ohms / 0.058 Ohms
IRF7319
MOSFET transistor. Channel type: N-P. Marking on the case: F7319. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Note: ( = P23AF 4532 SMD ). Note: Rds-on 0.029 Ohms / 0.058 Ohms
Set of 1
1.15$ VAT incl.
(1.15$ excl. VAT)
1.15$
Quantity in stock : 138
IRF7343

IRF7343

MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET...
IRF7343
MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.043 Ohms & 0.095 Ohms
IRF7343
MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.043 Ohms & 0.095 Ohms
Set of 1
2.18$ VAT incl.
(2.18$ excl. VAT)
2.18$
Quantity in stock : 50
IRF7389

IRF7389

MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET...
IRF7389
MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.029 Ohms & 0.058 Ohms
IRF7389
MOSFET transistor. Channel type: N-P. Function: pair of complementary N-channel and P-channel MOSFET transistors. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.029 Ohms & 0.058 Ohms
Set of 1
1.13$ VAT incl.
(1.13$ excl. VAT)
1.13$
Quantity in stock : 170
P2804NVG

P2804NVG

MOSFET transistor. Channel type: N-P. Function: 28 & 65m Ohms). Number of terminals: 8. Pd (Power Di...
P2804NVG
MOSFET transistor. Channel type: N-P. Function: 28 & 65m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2
P2804NVG
MOSFET transistor. Channel type: N-P. Function: 28 & 65m Ohms). Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2
Set of 1
1.50$ VAT incl.
(1.50$ excl. VAT)
1.50$
Quantity in stock : 77
SI4532ADY

SI4532ADY

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 1.2W. RoH...
SI4532ADY
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 1.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--20App, td(on)--12&8nS, td(off)--23&21nS
SI4532ADY
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 1.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--20App, td(on)--12&8nS, td(off)--23&21nS
Set of 1
0.96$ VAT incl.
(0.96$ excl. VAT)
0.96$
Quantity in stock : 2461
SI4532CDY

SI4532CDY

MOSFET transistor. C(in): 340pF. Cost): 67pF. Channel type: N-P. Trr Diode (Min.): 30 ns. IDss (min)...
SI4532CDY
MOSFET transistor. C(in): 340pF. Cost): 67pF. Channel type: N-P. Trr Diode (Min.): 30 ns. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--24&15App, td(on)--7.5&5.5nS, td(off)--14&17nS. Drain-source protection : no. G-S Protection: no
SI4532CDY
MOSFET transistor. C(in): 340pF. Cost): 67pF. Channel type: N-P. Trr Diode (Min.): 30 ns. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--24&15App, td(on)--7.5&5.5nS, td(off)--14&17nS. Drain-source protection : no. G-S Protection: no
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$
Quantity in stock : 10
SI4539ADY

SI4539ADY

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS:...
SI4539ADY
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--30&30App, td(on)--6&7nS, td(off)--30&40nS
SI4539ADY
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--30&30App, td(on)--6&7nS, td(off)--30&40nS
Set of 1
1.66$ VAT incl.
(1.66$ excl. VAT)
1.66$
Quantity in stock : 41
SI4542DY

SI4542DY

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS:...
SI4542DY
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--20&20App, td(on)--6&13nS, td(off)--18&47nS
SI4542DY
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--20&20App, td(on)--6&13nS, td(off)--18&47nS
Set of 1
2.46$ VAT incl.
(2.46$ excl. VAT)
2.46$
Quantity in stock : 66
SI9926BDY

SI9926BDY

MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). T...
SI9926BDY
MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: (G-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
SI9926BDY
MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: (G-S) MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
1.30$ VAT incl.
(1.30$ excl. VAT)
1.30$
Quantity in stock : 120
SI9936BDY

SI9936BDY

MOSFET transistor. Function: 9.31k Ohms. Number of terminals: 8. Assembly/installation: surface-moun...
SI9936BDY
MOSFET transistor. Function: 9.31k Ohms. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 30V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
SI9936BDY
MOSFET transistor. Function: 9.31k Ohms. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 30V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
1.73$ VAT incl.
(1.73$ excl. VAT)
1.73$
Quantity in stock : 5
SI9943DYT1

SI9943DYT1

MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). T...
SI9943DYT1
MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: SMD. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
SI9943DYT1
MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: SMD. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
17.52$ VAT incl.
(17.52$ excl. VAT)
17.52$
Quantity in stock : 2067
SI9945AEY

SI9945AEY

MOSFET transistor. Trr Diode (Min.): 45 ns. Function: 9.31k Ohms. ID (T=100°C): 3.7A. Idss (max): 3...
SI9945AEY
MOSFET transistor. Trr Diode (Min.): 45 ns. Function: 9.31k Ohms. ID (T=100°C): 3.7A. Idss (max): 3.2A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 60V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Drain-source protection : yes. G-S Protection: no
SI9945AEY
MOSFET transistor. Trr Diode (Min.): 45 ns. Function: 9.31k Ohms. ID (T=100°C): 3.7A. Idss (max): 3.2A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 60V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Drain-source protection : yes. G-S Protection: no
Set of 1
1.31$ VAT incl.
(1.31$ excl. VAT)
1.31$
Out of stock
SI9956DY

SI9956DY

MOSFET transistor. Function: 9.31k Ohms. Number of terminals: 8. Assembly/installation: surface-moun...
SI9956DY
MOSFET transistor. Function: 9.31k Ohms. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 20V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
SI9956DY
MOSFET transistor. Function: 9.31k Ohms. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 20V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
1.97$ VAT incl.
(1.97$ excl. VAT)
1.97$
Quantity in stock : 5
SK85MH10

SK85MH10

MOSFET transistor. RoHS: yes. Housing: PCB soldering. Housing: module. Configuration: Screwed. Numbe...
SK85MH10
MOSFET transistor. RoHS: yes. Housing: PCB soldering. Housing: module. Configuration: Screwed. Number of terminals: 3. Manufacturer's marking: SK85MH10. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 80A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0135 Ohms @ 80A. Gate breakdown voltage Ugs [V]: 3.3V. Switch-on time ton [nsec.]: 120ns. Switch-off delay tf[nsec.]: 570 ns. Ciss Gate Capacitance [pF]: 9100pF. Component family: full MOSFET bridge, NMOS. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +125°C
SK85MH10
MOSFET transistor. RoHS: yes. Housing: PCB soldering. Housing: module. Configuration: Screwed. Number of terminals: 3. Manufacturer's marking: SK85MH10. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 80A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0135 Ohms @ 80A. Gate breakdown voltage Ugs [V]: 3.3V. Switch-on time ton [nsec.]: 120ns. Switch-off delay tf[nsec.]: 570 ns. Ciss Gate Capacitance [pF]: 9100pF. Component family: full MOSFET bridge, NMOS. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +125°C
Set of 1
56.25$ VAT incl.
(56.25$ excl. VAT)
56.25$
Quantity in stock : 49
SP8M2

SP8M2

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS:...
SP8M2
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.059 Ohms / 0.065 Ohms
SP8M2
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.059 Ohms / 0.065 Ohms
Set of 1
1.29$ VAT incl.
(1.29$ excl. VAT)
1.29$
Quantity in stock : 462
SP8M3

SP8M3

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS:...
SP8M3
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.052 Ohms / 0.057 Ohms
SP8M3
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.052 Ohms / 0.057 Ohms
Set of 1
2.26$ VAT incl.
(2.26$ excl. VAT)
2.26$
Quantity in stock : 41
SP8M4

SP8M4

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS:...
SP8M4
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: SP8M4FU6TB. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.012 Ohms / 0.020 Ohms
SP8M4
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: SP8M4FU6TB. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.012 Ohms / 0.020 Ohms
Set of 1
2.52$ VAT incl.
(2.52$ excl. VAT)
2.52$
Out of stock
STS4DNF30L

STS4DNF30L

MOSFET transistor. Function: STripFET™ Power MOSFET. Number of terminals: 8. Assembly/installation...
STS4DNF30L
MOSFET transistor. Function: STripFET™ Power MOSFET. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 30V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
STS4DNF30L
MOSFET transistor. Function: STripFET™ Power MOSFET. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xN-CH 30V. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
12 3

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