MOSFET transistor IRF7343
Quantity
Unit price
1-4
1.87$
5-24
1.68$
25-49
1.54$
50-99
1.42$
100+
1.27$
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| Quantity in stock: 128 |
MOSFET transistor IRF7343. Assembly/installation: surface-mounted component (SMD). Channel type: N-P. Charge: 24/26nC. Drain current: 4.7/-3.4A. Drain-source voltage: 55/-55V. Function: pair of complementary N-channel and P-channel MOSFET transistors. Gate-source voltage: 20V, ±20V. Housing (according to data sheet): SO-8. Housing: SO. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. Polarity: unipolar. Power: 2W. Quantity per case: 2. RoHS: yes. Spec info: 0.043 Ohms & 0.095 Ohms. Technology: HEXFET®. Thermal resistance: 62.5K/W. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27
IRF7343
19 parameters
Assembly/installation
surface-mounted component (SMD)
Channel type
N-P
Charge
24/26nC
Drain current
4.7/-3.4A
Drain-source voltage
55/-55V
Function
pair of complementary N-channel and P-channel MOSFET transistors
Gate-source voltage
20V, ±20V
Housing (according to data sheet)
SO-8
Housing
SO
Number of terminals
8
Pd (Power Dissipation, Max)
2W
Polarity
unipolar
Power
2W
Quantity per case
2
RoHS
yes
Spec info
0.043 Ohms & 0.095 Ohms
Technology
HEXFET®
Thermal resistance
62.5K/W
Original product from manufacturer
International Rectifier