N-channel transistor, 12A, 19A, 50mA, 0.34 Ohms, TO-247, TO-247, 800V - STW18NK80Z
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 8.10$ | 8.10$ |
| 2 - 2 | 7.70$ | 7.70$ |
| 3 - 4 | 7.45$ | 7.45$ |
| 5 - 9 | 7.29$ | 7.29$ |
| 10 - 19 | 7.13$ | 7.13$ |
| 20 - 29 | 6.89$ | 6.89$ |
| 30+ | 6.64$ | 6.64$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 8.10$ | 8.10$ |
| 2 - 2 | 7.70$ | 7.70$ |
| 3 - 4 | 7.45$ | 7.45$ |
| 5 - 9 | 7.29$ | 7.29$ |
| 10 - 19 | 7.13$ | 7.13$ |
| 20 - 29 | 6.89$ | 6.89$ |
| 30+ | 6.64$ | 6.64$ |
N-channel transistor, 12A, 19A, 50mA, 0.34 Ohms, TO-247, TO-247, 800V - STW18NK80Z. N-channel transistor, 12A, 19A, 50mA, 0.34 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 12A. ID (T=25°C): 19A. Idss (max): 50mA. On-resistance Rds On: 0.34 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 6100pF. Cost): 500pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 920 ns. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. G-S Protection: yes. Id(imp): 76A. IDss (min): 1uA. Marking on the case: W18NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 17/06/2025, 16:25.
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