N-channel transistor STW11NK90Z, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V

N-channel transistor STW11NK90Z, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V

Quantity
Unit price
1-4
5.13$
5-14
4.54$
15-29
4.15$
30+
3.76$
Equivalence available
Quantity in stock: 57

N-channel transistor STW11NK90Z, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 50uA. On-resistance Rds On: 0.82 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 3000pF. Channel type: N. Conditioning unit: 30. Conditioning: plastic tube. Cost): 240pF. Drain-source protection: zener diode. Function: ZenerProtect. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 36.8A. Marking on the case: W11NK90Z. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Td(off): 76 ns. Td(on): 30 ns. Technology: SuperMesh PpwerMOSFET. Trr Diode (Min.): 584 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58

Technical documentation (PDF)
STW11NK90Z
34 parameters
ID (T=100°C)
5.8A
ID (T=25°C)
9.2A
Idss (max)
50uA
On-resistance Rds On
0.82 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247
Voltage Vds(max)
900V
Assembly/installation
PCB through-hole mounting
C(in)
3000pF
Channel type
N
Conditioning unit
30
Conditioning
plastic tube
Cost)
240pF
Drain-source protection
zener diode
Function
ZenerProtect
G-S Protection
yes
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
36.8A
Marking on the case
W11NK90Z
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
200W
Quantity per case
1
RoHS
yes
Spec info
Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V
Td(off)
76 ns
Td(on)
30 ns
Technology
SuperMesh PpwerMOSFET
Trr Diode (Min.)
584 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics

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