N-channel transistor STW11NK100Z, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. Assembly/installation: PCB through-hole mounting. C(in): 3500pF. Channel type: N. Conditioning unit: 30. Conditioning: plastic tube. Cost): 270pF. Drain-source protection: yes. Function: extremely high dv/dt capability, Switching applications. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 33.2A. Marking on the case: W11NK100Z. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 230W. Quantity per case: 1. RoHS: yes. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58